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(R)
2N3771 2N3772
HIGH POWER NPN SILICON TRANSISTOR
s
STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
1 2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEO V CEV V CBO V EBO IC I CM IB I BM P tot T stg Parameter 2N3771 Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Base Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c 25 o C Storage Temperature 40 50 50 5 30 30 7.5 15 150 -65 to 200 Value 2N3772 60 80 100 7 20 30 5 15 V V V V A A A A W
o
Unit
C
December 2000
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2N3771/2N3772
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V for all V CB = 30 V T j = 150 o C for 2N3771 for 2N3772 for 2N3771 for 2N3772 for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 R BE = 100 I C = 0.2 A for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A I B = 1.5 A IB = 6 A IB = 1 A IB = 4 A V CB = 30 V V CB = 50 V V CB = 50 V V CB = 100 V V CB = 5 V V CB = 7 V 40 60 50 80 45 70 2 4 1.4 4 2.7 2.7 15 5 15 5 f = 1 KHz f = 50 KHz 40 0.2 6 MHz A 60 Min. Typ. Max. 2 5 10 10 10 4 5 5 5 Unit mA mA mA mA mA mA mA mA mA V V V V V V V V V V V V
I CEO I CBO I EBO
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CEV(sus) Collector-Emitter Sustaining Voltage (V EB = -1.5V) V CER(sus) Collector-Emitter Sustaining Voltage (R BE = 100 ) V CE(sat) Collector-Emitter Saturation Voltage
V BE
Base-Emitter Voltage
for 2N3771 I C = 15 A V CE = 4 V for 2N3772 I C = 10 A V CE = 4 A for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A IC = 1 A IC = 1 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V
h FE
DC Current Gain
60
h FE fT I s/b
Small Signal Current Gain Transition frequency Second Breakdown Collector Current
V CE = 25 V t = 1 s (non repetitive)
Pulsed: Pulse duration = 300 s, duty cycle 2 %
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2N3771/2N3772
TO-3 MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D C
U
V
O
N
R
B
P003F
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E
2N3771/2N3772
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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